IP PortfolioInterface PHYsiii_v_optical
of_inp_eml_tx
InP EML transmitter
Maturity plannedTargets III-V processDifficulty Very hardPriority 1
InP electro-absorption modulated laser (DFB plus EAM) transmitter die for 100G and 200G per lane PAM4 at O-band, with bias, temperature and monitor photodiode access.
Planned. This block is specified in the catalog with its interfaces and targets. No implementation exists yet; the skeleton command below generates a lint-clean shell with its ports and registers.
Interfaces
| Port | Direction | Kind | Width | Notes |
|---|---|---|---|---|
| rf_in | in | RF | 1 | |
| laser_bias | in | analog | 1 | |
| eam_bias | in | analog | 1 | |
| opt_out | out | analog | 1 | |
| mpd | out | analog | 1 |
Standards
- IEEE 802.3ck-2022
- IEEE P802.3dj
Notes
Fabricated in the Dyber, Inc. III-V fab; process and device data are placeholders until measured.
More in iii_v_optical
| ID | Block | Maturity |
|---|---|---|
| of_inp_dml_tx | InP directly modulated laser transmitter | planned |
| of_inp_mzm_tx | InP Mach-Zehnder modulator transmitter | planned |
| of_inp_hbcdm | InP coherent driver-modulator (HB-CDM) | planned |
| of_inp_icr | InP integrated coherent receiver | planned |
| of_inp_itla | InP tunable laser assembly (ITLA) | planned |
| of_inp_wgpd_array | InP waveguide photodiode array | planned |
| of_inp_apd_rx | InP APD receiver | planned |
| of_gaas_vcsel_tx | GaAs VCSEL array transmitter | planned |
| of_inp_soa | InP semiconductor optical amplifier | planned |
| of_inp_elsfp | InP external laser source for co-packaged optics | planned |