IP PortfolioSensing and RFiii_v_rf
of_rf_gaas_phemt_lna
GaAs pHEMT LNA
Maturity plannedTargets III-V processDifficulty HardPriority 1
Low-noise pHEMT amplifier with on-chip bias for L-band through Ka-band receivers.
Planned. This block is specified in the catalog with its interfaces and targets. No implementation exists yet; the skeleton command below generates a lint-clean shell with its ports and registers.
Interfaces
| Port | Direction | Kind | Width | Notes |
|---|---|---|---|---|
| rfin | inout | RF | 1 | |
| rfout | inout | RF | 1 |
Standards
No external standard applies.
Notes
Dyber, Inc. in-house GaAs pHEMT process.
More in iii_v_rf
| ID | Block | Maturity |
|---|---|---|
| of_rf_gaas_phemt_pa | GaAs pHEMT power amplifier | planned |
| of_rf_gaas_hbt_pa | GaAs HBT handset power amplifier | planned |
| of_rf_gaas_switch | GaAs pHEMT switch and attenuator | planned |
| of_rf_gaas_mmic_mixer | GaAs MMIC mixer and multiplier | planned |
| of_rf_gaas_core_chip | GaAs T/R core chip | planned |
| of_rf_inp_hbt_pa | InP HBT millimeter-wave and sub-THz PA | planned |
| of_rf_inp_hbt_lna | InP HEMT/HBT sub-THz LNA | planned |
| of_rf_inp_transceiver | InP sub-THz transceiver front end | planned |